IRFZ24NLPbF
FEATURES
- With TO-262(DPAK) packaging
- Surface mount
- High speed switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operationz
- APPLICATIONS
- Switching applications
INCHANGE Semiconductor
IRFZ24NLPb F
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
Total Dissipation
Tj
Operating Junction Temperature
Tstg
Storage Temperature
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c)
Channel-to-case thermal resistance
Rth(ch-a)
Channel-to-ambient thermal resistance
VALUE 55
±20 17 12 68 45
-55~175
-55~175
UNIT V V A A W ℃ ℃
MAX 3.3 40
UNIT ℃/W ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc N-Channel MOSFET...
