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IRFR3711 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤6.5mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor IRFR3711, IIRFR3711 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency Buck Converters For Server Processor Power Synchronous FET ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 100 IDM Drain Current-Single Pulsed 440 PD Total Dissipation @TC=25℃ 120 Tj Max.