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IRFP90N20D - N-Channel MOSFET

Features

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  • Static drain-source on-resistance: RDS(on)≤23mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP90N20D，IIRFP90N20D ·FEATURES ·Static drain-source on-resistance: RDS(on)≤23mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC Converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 94 IDM Drain Current-Single Pulsed 380 PD Total Dissipation @TC=25℃ 580 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.
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