Datasheet4U Logo Datasheet4U.com

IRFP4332 - N-Channel MOSFET

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on)≤33mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFP4332PBF PDP SWITCH International Rectifier
IRFP4310ZPBF HEXFET Power MOSFET International Rectifier
IRFP4321PBF HEXFET Power MOSFET International Rectifier
IRFP4368PBF HEXFET Power MOSFET International Rectifier
IRFP4368PbF Power MOSFET Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
IRFP4310Z N-Channel MOSFET
IRFP4321 N-Channel MOSFET
IRFP4368 N-Channel MOSFET
IRFP4004 N-Channel MOSFET
IRFP4110 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4332，IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Repetitive Peak Current Capability for Reliable Operation ·Short fall & Rise Times For Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 57 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 360 Tj Max.