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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFB4321PBF
·FEATURES ·With low gate drive requirements ·Improved diode recovery improves switching ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS VGSS
ID IDM
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous@TC=25℃
TC=100℃ Drain Current-Single Pulsed
150
±30 85 60
330
PD
Total Dissipation
350
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
IRFB4321PBF Datasheet
