Click to expand full text
isc N-Channel Mosfet Transistor
·FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology ·High speed switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High current ,high speed switching ·Switch mode power supplies ·DC-AC converters for welding equipment and Uninterruptible
power supplies and motor Driver.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
3.2
A
IDM
Drain Current-Single Pluse
12.8
A
PD
Total Dissipation @TC=25℃
74
W
TJ
Max.
IRFAC32 Datasheet
