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IRF2804S - N-Channel MOSFET

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Part number IRF2804S
Manufacturer INCHANGE
File Size 265.14 KB
Description N-Channel MOSFET
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Description

Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@TC=100℃ 200 A

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