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IPU80R1K4CE - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A).
  • Advanced trench process technology.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.9 A PD Total Dissipation @TC=25℃ 63 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 2 ℃/W IPU80R1K4CE isc website：www.iscsemi.
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