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IPP60R280CFD7 - N-Channel MOSFET

Description

This new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VG

Features

  • Static drain-source on-resistance: RDS(on) ≤0.28Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPP60R280CFD7,IIPP60R280CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·This new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 31 PD Total Dissipation @TC=25℃ 52 Tj Max.
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