Datasheet4U Logo Datasheet4U.com

IPP60R074C6 - N-Channel MOSFET

Features

  • With low gate drive requirements.
  • Very high commutation ruggedness.
  • Extremely high frequency operation.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP60R074C6 MOSFET Infineon
IPP60R070CFD7 MOSFET Infineon
IPP60R022S7 600V MOSFET Infineon
IPP60R037CM8 600V MOSFET Infineon
IPP60R040C7 MOSFET Infineon

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP60R070CFD7 N-Channel MOSFET
IPP60R040C7 N-Channel MOSFET
IPP60R060C7 N-Channel MOSFET
IPP60R060P7 N-Channel MOSFET
IPP60R080P7 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IPP60R074C6 ·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC silverbox ·UPS and solar ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM PD Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed Total Dissipation ±20 57.7 31.6 151 480.
Published: |