Datasheet4U Logo Datasheet4U.com

IPP147N12N3 - N-Channel MOSFET

Features

  • br>.
  • Static drain-source on-resistance: RDS(on) ≤14.7mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPP147N12N3 MOSFET Infineon
IPP147N12N3G MOSFET Infineon
IPP147N03L Power-Transistor Infineon
IPP147N03LG Power-Transistor Infineon Technologies
IPP14N03LA OptiMOS 2 Power-Transistor Infineon Technologies AG

Other Datasheets by Inchange Semiconductor

Part Number Description
IPP100N08N3 N-Channel MOSFET
IPP110N20N3 N-Channel MOSFET
IPP110N20NA N-Channel MOSFET
IPP111N15N3 N-Channel MOSFET
IPP114N12N3 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor IPP147N12N3，IIPP147N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤14.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 224 PD Total Dissipation @TC=25℃ 107 Tj Max.
Published: |