Datasheet4U Logo Datasheet4U.com

IPI70R950CE - N-Channel MOSFET

Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Puls

Features

  • Static drain-source on-resistance: RDS(on) ≤0.38Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IPI70R950CE

Datasheet Details

Part number IPI70R950CE
Manufacturer INCHANGE
File Size 282.31 KB
Description N-Channel MOSFET
Datasheet download datasheet IPI70R950CE Datasheet
Additional preview pages of the IPI70R950CE datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Pulsed 12 A PD Total Dissipation @TC=25℃ 68 W Tj Max. Operating Junction Temperature -40~150 ℃ Tstg Storage Temperature -40~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 1.
Published: |