Datasheet4U Logo Datasheet4U.com

IPI65R099C6 - N-Channel MOSFET

Description

Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 38 A IDM Drain Current-Single Pulse

Features

  • Static drain-source on-resistance: RDS(on) ≤0.099Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPI65R099C6 MOSFET Infineon
IPI65R065C7 MOSFET Infineon
IPI65R110CFD MOSFET Infineon
IPI65R150CFD MOSFET Infineon
IPI65R190C6 Power Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
IPI65R110CFD N-Channel MOSFET
IPI65R150CFD N-Channel MOSFET
IPI65R190C6 N-Channel MOSFET
IPI65R190CFD N-Channel MOSFET
IPI65R190E6 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 38 A IDM Drain Current-Single Pulsed 115 A PD Total Dissipation @TC=25℃ 278 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
Published: |