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IPA65R280C6 - N-Channel MOSFET

Features

  • With TO-220F Package.
  • Drain Source Voltage- : VDSS=650V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 13.8 8.7 A IDM Drain Current-Single Pulsed 39 A PD Total Dissipation @TC=25℃ 32 W Tj Max.
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