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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IIPA65R150CFD
DESCRIPT ·Low Drain-Source On-Resistance
: RDS(on) <0.15Ω(Max) ·Drain Current ID=22A@ TC=25℃ ·New technology for high voltage device ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power factor correction ·Switched mode power supplies ·Uninterruptible power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
650
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
22
A
IdM
Pulsed drain current
72
A
Ptot
Total Dissipation@TC=25℃
34.7
W
Tj
Max.
IIPA65R150CFD Datasheet
