Datasheet4U Logo Datasheet4U.com

HLB124E - NPN Transistor

Description

High Speed Switching Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

circuits, and amplifier applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HLB124E NPN Transistor Hi-Sincerity Mocroelectronics
HLB124 NPN EPITAXIAL PLANAR TRANSISTOR UTC
HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Hi-Sincerity Mocroelectronics
HLB121 NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR UTC
HLB121A NPN Triple Diffused Planar Type High Voltage Transistor HI-SINCERITY

Other Datasheets by Inchange Semiconductor

Part Number Description
HLB123D NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor HLB124E DESCRIPTION ·High Speed Switching ·Low Collector Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switching inductive circuits, and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse 4 A IB Base Current 1 A IBP Base Current-Pulse PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 2 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |