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FMH09N90E - N-Channel MOSFET

Key Features

  • With TO-3PN packaging.
  • Low on-resistance.
  • Low drive current.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMH09N90E ·FEATURES ·With TO-3PN packaging ·Low on-resistance ·Low drive current ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 36 PD Total Dissipation 202 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal