Datasheet Details
| Part number | FJPF5027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.41 KB |
| Description | NPN Transistor |
| Datasheet |
 FJPF5027 Datasheet
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| Part number | FJPF5027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.41 KB |
| Description | NPN Transistor |
| Datasheet |
FJPF5027 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide SOA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor FJPF5027 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVEBO Emitter -Base Breakdown Voltage IE= 1mA;
IC= 0 BVCEO Collector- Emitter Breakdown Voltage IC= 5mA;
IB= 0 BVCBO Collector- Base Breakdown Voltage IC= 1mA;
isc Silicon NPN Power Transistor FJPF5027.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FJPF5027 | NPN Silicon Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| FJPF5021 | NPN Transistor |
| FJP13009 | Silicon NPN Power Transistor |
| FJP3305 | Silicon NPN Transistor |
| FJP5027 | NPN Transistor |