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FCH099N60E Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

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General Description

·Power factor correction ·Switched mode power supplies ·Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS ID Drain-Source Voltage Gate-Source Voltage-Continuous AC (f>1Hz) Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±30 V 37 A 152 A 350 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.35 ℃/W FCH099N60E isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

ID= 10mA VGS(th) Gate Threshold Voltage VDS= VGS;

Overview

isc N-Channel MOSFET Transistor.

Key Features

  • Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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