Download DSEP29-12A Datasheet PDF
Inchange Semiconductor
DSEP29-12A
FEATURES - With TO-220 packaging - Metal silicon junction, majority carrier conduction - Low power loss, high efficiency - Guard ring for over voltage protection - High surge capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching power supply - High frequency inverters - Reverse battery protection - Polarity protection applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=115℃ VALUE UNI T IFRM Repetitive Peak Forward Current@Tc=115℃ Nonrepetitive Peak Surge Current IFSM 10 ms single half sine-wave superimposed on A rated load conditions;One shot(50Hz) Tj Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark Ultra fast Rectifier THERMAL...