DPG10I300PA
FEATURES
- Ultrafast recovery time
- Low forward voltage
- Low loss and soft recovery
- Single diode
- High temperature glass passivated junction
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in switching power supplies and other power
Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current @Tc=100℃
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
A wave, single phase, 50Hz)
Total Power Dissipation
Junction Temperature
-55~175 ℃
Tstg
Storage Temperature Range
-55~175 ℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
Ultrafast Recovery Rectifier
INCHANGE Semiconductor
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...
