Full PDF Text Transcription for DD160KB160 (Reference)
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DD160KB160 Diode Module FEATURES ·High surge current capability ·Isolated mounting base ·High voltage ratings up to 1600V ·Minimum Lot-to-Lot variations for robust device...
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e ratings up to 1600V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Battery charges ·DC motor drives ·Various rectifiers ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VRRM Repetitive Peak Reverse Voltage IF(AV) Average Forward Current IF(RMS) R.M.S. Forward Current TC=90℃, 180° conduction, half sine wave IFSM Surge Forward Current I2t I2t for fusing 10ms,half sine wave,VR=0.6VRRM TJ Junction Temperature Tstg Storage Temperature Range Viso Isolation Breakdown Voltage（R.M.S.） VALUE UNIT 1600 V 160 A 250 A 6 KA 184 KA2s -40~150 ℃ -40~125 ℃ 2500 V isc website：www.iscse
DD160KB160 Datasheet
