Datasheet Details
| Part number | D732 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 57.56 KB |
| Description | 2SD732 |
| Datasheet |
 D732 Datasheet
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| Part number | D732 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 57.56 KB |
| Description | 2SD732 |
| Datasheet |
D732 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Current Capability ·Complement to Type 2SB696 APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 8A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 12 A 80 W 150 ℃ -40~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD732 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
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