Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
High Power Dissipation
Complement to Type 2SA1060
APPLICATIONS
Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-B
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2484
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060
APPLICATIONS ·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
80 V
wwwVCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
8A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
http://www.Datasheet4U.