Download C1730 Datasheet PDF
Inchange Semiconductor
C1730
DESCRIPTION - Low Base Time Constant; rbb’ - CC = 10 ps TYP. - High Gain Bandwidth Product f T= 1100 MHz TYP. - Low Output Capacitance; COB = 1.5 p F Max. APPLICATIONS - Designed for TV VHF, UHF tuner oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 50 m A 0.25 W 125 ℃ -55~125 ℃ isc Website:.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC1730 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10m A ; IB= 1m A ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.5 V 0.1 μA h FE DC Current Gain IC= 5m A ; VCE= 10V 40 180 f T Current-Gain- Bandwidth Product IE= -5m...