C122B1 - Thyristors

Inchange Semiconductor

General Description

With TO-220 packaging High heat dissipation and durability Thermowatt construction for low thermal Glass passivated junctions and center gate fire for greater parameter uniformity and stability Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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Datasheet Details

Part number	C122B1
Manufacturer	Inchange Semiconductor
File Size	156.39 KB
Description	Thyristors
Datasheet	C122B1 Datasheet

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isc Thyristors INCHANGE Semiconductor C122B1 DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass pass...

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on and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=75℃ ) PG(AV) Average gate power dissipation Tp=8.3ms;Tc=70℃ Tj Operating junction temperature Tstg Storage temperature MIN