Datasheet4U Logo Datasheet4U.com

BUX59 - NPN Transistor

Description

Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUX50 Bipolar NPN Device Seme LAB
BUX51 NPN SILICON TRANSISTOR Seme LAB
BUX54 NPN SILICON TRANSISTOR Seme LAB
BUX55 Bipolar NPN Device Seme LAB
BUX10 HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
BUX10 NPN Transistor
BUX11 NPN Transistor
BUX16 NPN Transistor
BUX16A NPN Transistor
BUX16B NPN Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A PC Collector Power Dissipation@TC=25℃ 70 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W BUX59 isc website：www.iscsemi.
Published: |