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isc Silicon NPN Power Transistor
BUX39
DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching-control amplifiers, power gates,
switching regulators, power switching circuits converters, inverters and control circuits.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO VCEX VCER VCEO
Collector-Base Voltage
Collector-Emitter Voltage VBE= -1.