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BUX17C - NPN Transistor

This page provides the datasheet information for the BUX17C, a member of the BUX17 NPN Transistor family.

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min)- BUX17 = 250V(Min)- BUX17A = 300V(Min)- BUX17B = 350V(Min)- BUX17C High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

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Full PDF Text Transcription

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min)- BUX17 = 250V(Min)- BUX17A = 300V(Min)- BUX17B = 350V(Min)- BUX17C ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BUX17 250 VCEV Collector-Emitter Voltage VBE= -1.
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