Click to expand full text
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 450V(Min.) ·High Speed Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in switching mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PT
Total Power Dissipation @ TC≤25℃
TJ
Junction Temperature
3
A
125
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.
BUW26 Datasheet
