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BUK444-600B - N-Channel MOSFET

Download the BUK444-600B datasheet PDF. This datasheet also covers the BUK444-600A variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Drain Source Voltage- : VDSS=600V(Min) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance applic

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Note: The manufacturer provides a single datasheet file (BUK444-600A-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for BUK444-600B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUK444-600B. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK444-600A/B DESCRIPTION ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variati...

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ge- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK444-600A ID Current-continuous @ TC=25℃ BUK444-600B VALUE UNIT 600 V ±30 V 1.6 A 1.5 Ptot Total Dissipation@TC=25℃ 25 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range 150 ℃ isc website:www.iscsemi.