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isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (TBaB=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V CBO B
B
Collector-Base Voltage
500
V
V CEO B
B
Collector-Emitter Voltage
400
V
V EBO B
B
Emitter-Base Voltage
5
V
I CB
B
Collector Current- Continuous
15
A
I CM B
B
Collector Current-Peak
30
A
I BB
B
Base Current
1
A
I BM B
B
Base Current-Peak
P CB
B
Collector Power Dissipation @TB CB =25℃
T jB
B
Junction Temperature
5
A
155
W
150
℃
T stg B
B
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
RB th j-cB Th
BU941P Datasheet
