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isc Silicon NPN Power Transistor
BU932RPFI
DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
15
A
ICM
Collector Current-peak
30
A
IB
Base Current
1
A
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
5
A
60
W
150
℃
Tstg
Storage Temperature Range
-40~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W
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BU932RPFI Datasheet
