BU902 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in switching mode power supply.

INCHANGE

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Datasheet Details

Part number	BU902
Manufacturer	INCHANGE
File Size	210.52 KB
Description	NPN Transistor
Datasheet	BU902 Datasheet
Additional preview pages of the BU902 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor BU902 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 480V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply.

Published: Sep 24, 2020 |