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isc Thyristors
INCHANGE Semiconductor
BTW69-1200N
DESCRIPTION ·With TO-3P packaging ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications ·Battery charging system ·Uninterruptible power supply ·Variable speed motor drive ·Industrial welding systems ·By pass AC switch
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VDRM Repetitive peak off-state voltage
600
V
VRRM Repetitive peak reverse voltage
600
V
IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current
@Tc=102℃
50
A
50Hz 60Hz
763 700
A
PG(AV) Average gate power dissipation ( over any 20 ms period ) @Tc=125℃
1
W
Tj
Operating junction temperature
-40~125 ℃
Tstg Storage temperature
-40~1