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BF775 - NPN Transistor

Description

NF = 1.8 dB TYP.

︱S21e︱2 = 13dB TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in TV-sat

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BF775 NPN Silicon RF Transistor Siemens Semiconductor Group
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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13dB TYP. @VCE= 8 V,IC = 10mA,f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in TV-sat and UHF tuners. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage 20 V 20 V 15 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2.5 V 30 mA 4 mA 0.28 W 150 ℃ -65~150 ℃ BF775 isc website：www.iscsemi.
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