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BDY74 - NPN Transistor

Description

Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

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Datasheet Details

Part number BDY74
Manufacturer INCHANGE
File Size 204.81 KB
Description NPN Transistor
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.
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