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BDY73 - NPN Transistor

Description

Excellent Safe Operating Area DC Current Gain-hFE=50-150@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and

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Datasheet Details

Part number BDY73
Manufacturer INCHANGE
File Size 204.57 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=50-150@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
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