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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min) ·Low Collector-Emitter Saturation Voltage ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation @TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
BDY60
isc website：www.iscsemi.
BDY60 Datasheet
