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BDW58 - PNP Transistor

Download the BDW58 datasheet PDF. This datasheet also covers the BDW56 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 Complement to Type BDW55/57/59 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in professional equipment such as te

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Note: The manufacturer provides a single datasheet file (BDW56-INCHANGE.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 ·Complement to Type BDW55/57/59 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage BDW56 BDW58 BDW60 -45 -60 -100 VCER Collector-Emitter Voltage RBE= 1kΩ BDW56 BDW58 BDW60 -45 -60 -100 VCEO Collector-Emitter Voltage BDW56 -45 BDW58 -60 BDW60 -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 12.
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