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BDW57 - NPN Transistor

Download the BDW57 datasheet PDF. This datasheet also covers the BDW55 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS)= 45V- BDW55 = 60V- BDW57 = 80V- BDW59 Complement to Type BDW56/58/60 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in professional equipment such as telec

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Note: The manufacturer provides a single datasheet file (BDW55-INCHANGE.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 45V- BDW55 = 60V- BDW57 = 80V- BDW59 ·Complement to Type BDW56/58/60 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage BDW55 45 BDW57 60 BDW59 100 VCER Collector-Emitter Voltage RBE= 1kΩ BDW55 45 BDW57 60 BDW59 100 VCEO Collector-Emitter Voltage BDW55 45 BDW57 60 BDW59 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 12.
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