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BDW56 - PNP Transistor

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 Complement to Type BDW55/57/59 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in professional equipment such as te

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isc Silicon PNP Power Transistors DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60 ·Complement to Type BDW55/57/59 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage BDW56 BDW58 BDW60 -45 -60 -100 VCER Collector-Emitter Voltage RBE= 1kΩ BDW56 BDW58 BDW60 -45 -60 -100 VCEO Collector-Emitter Voltage BDW56 -45 BDW58 -60 BDW60 -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 12.
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