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BDW55 - NPN Transistor

Description

Collector Emitter Sustaining Voltage- : VCEO(SUS)= 45V- BDW55 = 60V- BDW57 = 80V- BDW59 Complement to Type BDW56/58/60 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in professional equipment such as telec

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 45V- BDW55 = 60V- BDW57 = 80V- BDW59 ·Complement to Type BDW56/58/60 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage BDW55 45 BDW57 60 BDW59 100 VCER Collector-Emitter Voltage RBE= 1kΩ BDW55 45 BDW57 60 BDW59 100 VCEO Collector-Emitter Voltage BDW55 45 BDW57 60 BDW59 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 12.
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