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BDV64C - PNP Transistor

Download the BDV64C datasheet PDF. This datasheet also covers the BDV64 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Current -IC= -12A Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A Complement to Type BDV65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amp

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Note: The manufacturer provides a single datasheet file (BDV64-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.0V(Max.)@ IC= -5A ·Complement to Type BDV65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDV64 -60 VCBO Collector-Base Voltage BDV64A BDV64B -80 -100 BDV64C -120 BDV64 -60 VCEO Collector-Emitter Voltage BDV64A BDV64B -80 -100 BDV64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -20 IB Base Current-Continuous -0.
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