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BDT30B - PNP Transistor

Download the BDT30B datasheet PDF. This datasheet also covers the BDT30 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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Note: The manufacturer provides a single datasheet file (BDT30-INCHANGE.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BDT60 PNP Transistor Power Innovations Limited
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BDT60 Silicon PNP Power Transistor Inchange Semiconductor
BDT60A PNP Transistor Power Innovations Limited
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Other Datasheets by Inchange Semiconductor

Part Number Description
BDT30BF PNP Transistor
BDT30 PNP Transistor
BDT30A PNP Transistor
BDT30AF PNP Transistor
BDT30C PNP Transistor

Full PDF Text Transcription

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isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C ·Complement to Type BDT29/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur.
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