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BDT29A - NPN Transistor

Download the BDT29A datasheet PDF. This datasheet also covers the BDT29 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

DC Current Gain -hFE = 40(Min)@ IC= 0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C Complement to Type BDT30/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

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Note: The manufacturer provides a single datasheet file (BDT29-INCHANGE.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C ·Complement to Type BDT30/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur.
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