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BD698 - PNP Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = -60V(Min.) DC Current Gain : hFE = 750(Min) @ IC= -3A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purp

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD698 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -3A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.
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