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BD376 - PNP Transistor

Description

DC Current Gain- : hFE= 20(Min)@ IC= -1A Complement to Type BD375/377/379 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME

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isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD376 -50 VCBO Collector-Base Voltage BD378 -75 V BD380 -100 BD376 -45 VCEO Collector-Emitter Voltage BD378 -60 V BD380 -80 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BD376/378/380 isc website：www.
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