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BD277 - PNP Transistor

Description

Wide Area of Safe Operation Low Saturation Voltage High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in series regulators and shunt regulators.

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isc Silicon PNP Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·Low Saturation Voltage·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in series regulators and shunt regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -4 IC Collector Current-Continuous -7 IB Base Current -3 PC Collector Power Dissipation @ TC=25℃ 70 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.
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