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BD262 - PNP Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = -60V(Min.) DC Current Gain : hFE = 750(Min) @ IC= -2A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purp

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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BD262 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -60V(Min.) ·DC Current Gain— : hFE = 750(Min) @ IC= -2A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -6 ICM Collector Current-Peak -10 IB Base Current -0.
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